Properties of ferroelectric (Pb,La) (Zr,Ti)O₃ thin films by MOCVD

(Pb,La)TiO3 (PLT) and (Pb,La)(Zr,Ti)O3 (PLZT) thin films were successfully grown by MOCVD, using (C2H5)3PbOCH2C(CH3)3, La(dpm)3, Zr(O-t-C4H9)4 and Ti(O-t-C3H7)4 as precursors. The PLT and PLZT thin films showed good dielectric and ferroelectric properties. PLZT films showed better fatigue properties than PZT films. Large area growth of PLZT thin films on a 6 inch silicon wafer was carried out and uniform PLZT films with a variation in film thickness of ±1.5% could be obtained. The case of La(i-C3H7C5H4)3 as a new La precursor for growing PLT and PLZT will be discussed.