Classical Coulomb blockade of a silicon nanowire dot

Single electron transistors (SETs) have been fabricated with an individual n-type single-crystal silicon nanowire (SiNW) that was grown by a catalytic chemical vapor deposition technique, and their transport properties have been measured in low temperatures. The SiNW-SET in the present work exhibited well pronounced Coulomb oscillations in a wide gate voltage range from −10to10V, featuring in uniform peak height, uniform full width at half maximum, and equidistant peak spacing. The charging energy turned out to be 64μeV. The temperature dependence of Coulomb oscillations revealed that the dot worked within the classical Coulomb blockade model.