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Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO 2 /Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10 4 s at 85°C. Electric-pulse-induced resistance switching test up to 10 8 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.
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Fan et al. (2015) studied this question.
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