Room Temperature Photoluminescence Characterization of Low Dose As+ Implanted Si after Rapid Thermal Annealing

Arsenic (As + 150 keV, 1.0 × 10 13 cm −2 ) implanted p − -Si(100) wafers were spike annealed at 1100°C for 1s in a commercially available rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed while As dopant profiles, measured by secondary ion mass spectroscopy (SIMS), were almost identical. Photoluminescence (PL) spectra were measured from all wafers under three different excitation wavelengths (532, 650 and 827 nm) at room temperature. PL spectra showed large intensity variation, corresponding to the sheet resistance. PL excitation wavelength dependence suggests the variation in density of residual damage as the possible cause of sheet resistance variation.