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The interfacial energy band alignment of the interface between H‐terminated diamond, exposed to either NO or SO 2 , and an Al 2 O 3 layer is studied using synchrotron radiation X‐ray photoelectron spectroscopy (XPS) and X‐ray absorption near‐edge structure (XANES) measurements. From the results, type II band alignment is determined for both the Al 2 O 3 /NO/H‐diamond and the Al 2 O 3 /SO 2 /H‐diamond heterointerfaces. The valence band offsets are determined to be 3.7 eV for the Al 2 O 3 /NO/H‐diamond heterointerface and 3.5 ± 0.1 eV for the Al 2 O 3 /SO 2 /H‐diamond heterointerface. XPS spectra indicate that the NO and SO 2 decompose on the H‐diamond surface, and XANES measurements demonstrate the formation of oxygen related interface states.
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Saha et al. (2018) studied this question.
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