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The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 °C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Li et al. (2006) studied this question.
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