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The characteristics of superluminescent diodes (SLDs) using InGaAs quantum dot is presented. In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 nm, respectively, covering the range 980–1060 nm.
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Heo et al. (2003) studied this question.
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