Dislocation-accelerated impurity-induced layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures grown on GaAs-on-Si

Data are presented showing that dislocations and Si autodiffusion promote accelerated layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures grown on GaAs-on-Si ‘‘substrates’’ via metalorganic chemical vapor deposition. The accelerated impurity-induced layer disordering is more extreme at higher temperatures (>800 °C) and virtually nonexistent at lower temperatures (≲775 °C).