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Experimental evidence is presented showing that the thickness dependence observed for charge-to-breakdown measurements of very thin oxide layers in metal-oxide-semiconductor structures is correlated with that for the reduction in total generated microscopic defects necessary to induce destruction. These results are related to a percolation model for the formation of paths connecting some of these defects from the cathode to the anode at the time of breakdown.
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DiMaria et al. (1997) studied this question.
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