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December 1, 2007IEEE Transactions on Microwave Theory and Techniques

An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR

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Authors

OJOlivier JardelThales (France)FGFabien de GrooteCentre National de la Recherche ScientifiqueTRTibault ReveyrandCentre National de la Recherche Scientifique

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Jardel et al. (2007) studied this question.

synapsesocial.com/papers/6a74fcfe4b0395c886dbe309https://doi.org/10.1109/tmtt.2007.907141
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