Optical Absorption Characteristics of GaAs–AlGaAs Multi-Quantum-Well Heterostructure Waveguides

Optical waveguide absorption characteristics of MBE grown GaAs–AlGaAs MQW doubleheterostructure wafers are studied by measuring edge luminescence under photoexcitation, and are compared with those of conventional GaAs DH wafers. The edge luminescence spectra show a double peak structure which is well explained by waveguide self-absorption, rather than by L0-phonon participation as has been suggested by other workers. The optical absorption loss of the unexcited MQW waveguide at its lasing wavelength is found to be much smaller than that for the conventional DH waveguide.