Experimental study demonstrates high electron mobility and low subthreshold swing in α-In2Se3/Ge heterojunction transistors, highlighting compatibility with silicon CMOS platforms.
In recent years, traditional CMOS platforms have encountered common issues when the channel thickness is reduced to 5 nm. In this study, Type-I junction field-effect transistors (JFETs) were fabricated based on mixed-dimensionalα-In2Se3/Ge heterojunctions. As a result, the device exhibited n-type transfer behavior with depletion-mode characteristics. The current on-/off-ratio reached10^4regardless of source-drain voltage (Vds). The minimum subthreshold swing (SS) was calculated to be 101 mV/dec atVds =1V. Furthermore, atVds =1.5V, the on-state saturation current density and maximum electron mobility reached0.107~μA/μm and 87.5 cm2/V·s, respectively. Benefiting from the high-quality heterojunction, the device demonstrated a small threshold voltage shift (Δ VTh) of 0.45 V, indicating a low interface trap density of3.23× 10^10cm^-2. Overall, our designed architecture, compatible with Si CMOS technology, is suitable for application in high-speed n-type loaded MOSFET and ferroelectric FETs.
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Zhou et al. (2025) studied this question.
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