A physical model for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in N2O

In this paper a physical model is presented for boron penetration through an oxynitride gate dielectric prepared by rapid thermal processing in a nitrous oxide (N2O) ambient. Compared with a conventional rapid thermally grown oxide, oxynitride dielectrics show excellent diffusion barrier properties to the dopant (BF2). The Auger electron spectroscopy nitrogen depth profile shows nitrogen pileup at the Si/SiO2 interface, which may explain the lower segregation coefficient (≊20 times lower) of the oxynitride dielectric, as expected from suprem-iii simulation with modified diffusivity values.