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A theoretical approach in impurity solubility calculations for semiconductor crystals is developed. The steady-state solubility of boron, phosphorus, arsenic, and antimony in silicon at 900 to 1200 °C is experimentally investigated and compared to the previously published values. Thermodynamic parameters related to impurity interaction in silicon matrix are derived from the correct experimental data.
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Boeisenko et al. (1987) studied this question.
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