A 40 Gb/s Monolithically Integrated Linear Photonic Receiver in a <formula formulatype="inline"><tex Notation="TeX">0.25~μ m</tex></formula> BiCMOS SiGe:C Technology

This letter presents the first 40 Gb/s monolithically integrated silicon photonics linear receiver (Rx) comprising a germanium photodiode (Ge-PD) and a linear transimpedance amplifier (TIA). Measured optical-electrical (O/E) 3 dB bandwidth (BW) of the Rx is 31 GHz. At 40 Gb/s, the Rx achieves a sensitivity of-3~ dBmaverage optical input power with BER of2.5× 10⁻¹¹. It operates atλ =1.55 ~μ mwavelength, uses 3.3 and 3.7 V power supplies, dissipates 275 mW of power, provides maximum differential output amplitude of500 ~ mVₚₚ, and occupies an area of3.2~ mm². The presented receiver achieves the highest bit rate among the published work in monolithically integrated silicon photonics receivers.