Thin Cd1−xMnxTe semiconductor films with x ranging from 0 to 0.9 have been grown on CdTe (111) substrates using the atomic layer epitaxy method. The films grow epitaxially at all concentrations and show no manganese interdiffusion. The films are characterized by low-energy electron diffraction, Auger electron spectroscopy and angle-resolved UV photoemission.
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Pessa et al. (1984) studied this question.
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