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We report a study on gamma irradiated porous Si. The electron paramagnetic resonance study on porous Si irradiated by gamma rays shows that the observed signals come from an intrinsic defect, a Si dangling bond, at the interface of Si/SiOx in porous Si. The photoluminescence measurements show that the gamma irradiation not only increases the intensity of the photoluminescence but also greatly improves its stability. The spectra of the Fourier transform infrared absorption show that the gamma irradiation is an effective method for accelerating oxidation of porous Si. All experimental results can be explained by the increase of the oxidation layer thickness which decreases the nonradiative recombination probability of electron-hole pairs.
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Fu et al. (1993) studied this question.
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