To enhance the conversion efficiency of Cu 2 ZnSnS 4 (CZTS) thin film solar cells prepared by the sulfurization method, we investigated the formation process of the CZTS thin film. The holding temperature of the sulfurization was 580 °C. This study showed that the spreading resistance (SR) of the CZTS layer strongly depends on the holding time of the sulfurization. At the intermediate holding time (∼30 min), the SR of the CZTS layer came to a minimum, and the efficiency of the CZTS solar cell came to a maximum. A 7.6% efficiency CZTS solar cell without a high-resistance buffer layer and an antireflection coating was fabricated.
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Fukano et al. (2013) studied this question.
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