We have fabricated MgxZn1−xO epitaxial composition spreads where the composition across the chip is linearly varied from ZnO to MgO. By using a scanning x-ray microdiffractometer and transmission electron microscopy, we have mapped the phase evolution across the spread. We have discovered a unique growth relationship between cubic and hexagonal MgxZn1−xO where their basal planes are coincident in the phase-separated region of the phase diagram where 0.37⩽x⩽0.6. The continuously changing band gap across the spread is used as a basis for compact broadband photodetector arrays with a range of detection wavelengths separately active at different locations on the spread film. The composition-spread photodetector is demonstrated in the wavelength range of 290–380 nm using the ZnO to Mg0.4Zn0.6O region of the spread.
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Takeuchi et al. (2003) studied this question.
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