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δ-doped homoepitaxial diamond films were grown by microwave CVD (MWCVD) in order to simultaniously achieve convenient carrier sheet concentration (Ns < 1013 cm-2) and low acceptor activation energy. The δ-doped layers are contacted laterally using selectively grown highly doped p+-diamond. Si-based contacts were deposited and a temperature independent specific contact resistance of 7 × 10-5 Ωcm2 was extracted from TLM-measurements between room temperature and 400°C.
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Vescan et al. (1996) studied this question.
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