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The state filling effect in semiconductor quantum well lasers significantly affects the modulation dynamics. The state filling effect strongly depends on the optical confining layer structure. As a direct consequence of the reduction of the state filling effect in a properly designed graded index separate confinement heterostructure, a record 3dB bandwidth in excess of 9GHz has been obtained in uniformly pumped single quantum well GaAs/AlGaAs lasers by a careful tailoring of the device parameters.
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Chen et al. (1992) studied this question.
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