Answers are grounded in this paper and cite their sources.
We have studied the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum-dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~50 meV) are measured from stacked InAs quantum-dash layers with optimized growth conditions. The lasers exhibit very large T0(204 K) and large modulation bandwidth (f-3 dB=12 GHz)
No takes yet. Share an insight, caveat, or question.
Mi et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: