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Self-assembled InAs quantum dots emitting at 1.5 - with high efficiency have been grown by GSMBE on InP. One of the most important properties of quantum dots is the conservation of high radiative recombination efficiency at room temperature as opposed to the case of quantum wells. This property has been evidenced on carefully grown quantum dots by photoluminescence measurements between 2 K and 300 K.
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Lambert et al. (1998) studied this question.
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