New Optical Memory Structure Using Self-Assembled InAs Quantum Dots

We propose a new optical memory structure using self-assembled InAs quantum dots (QDs) for possible applications to wavelength-domain-multiplication memory, which should lead to increase memory density. Data stored in this memory structure can be read using photocurrent and then erased electrically. In a preliminary study, we confirmed the memory effect of photocurrent caused by the InAs QDs for the first time. A retention time of 0.48 ms for the memory was obtained at 300 K.