Buried heterostructure lasers with 4, 8 and 16 compressively strained InGaAsP quantum wells have been fabricated. A record low threshold current of 3.1 mA has been obtained and thresholds for all devices are lower than for lasers with wells of compressively strained or lattice-matched InxGa1 − xAs. High output powers of over 60 mW per facet have been measured.
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Seltzer et al. (1992) studied this question.
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