In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring lasers

The growth, processing, and optical characterization of a single Y-junction In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring laser (6 mu m width, 11 approximately 251 mu m outer radius) are described. The circular ring lasers have been grown by metalorganic chemical vapor deposition, etched by SiCl/sub 4/ reactive ion etching, and planarized by polyimide. The dependences of laser threshold current density and peak emission wavelength (950 approximately 1015 nm) on outer radius are presented. The emission spectra show that the circular ring lasers lase mainly in high-order whispering gallery modes, with smaller outer radius ring lasers operating in low-order whispering gallery modes.>