Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates

We fabricated ultra-flexible organic non-volatile ferroelectric field-effect transistors (FeFETs) with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] on polyimide substrates, which adopted a solution-based top-contact/bottom-gate structure for low cost process without patterning. P(VDF-TrFE) gate dielectric layers and regioregular poly(3-hexylthiophene) active layers were formed by the spin-coating method. The field-effect mobility (μFE) was ∼0.28 cm2/V s, the on/off ratio was approximately 5.6 × 103, and the memory window (threshold voltage shift) was approximately 7 V. In addition, FeFETs were operated even at small bend radii without considerable changes in these values.