1.5 μm-gate GaAs m.o.s.f.e.t.s have been fabricated by anodic oxidation, and the microwave capability has been examined. The maximum oscillation frequency fmax is 22 GHz and the noise figure is 6.1 dB at 8 GHz. The results are comparable to those of GaAs m.e.s.f.e.t.s.
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Tokuda et al. (1977) studied this question.