Nonvolatile memory operations of p-channel metal-ferroelctric-insulator-semiconductor (MFIS)- and metal-ferroelectric-metal-insulator-semiconductor (MFMIS)-FETs using ferroelectric SrBi 2 Ta 2 O 9 (SBT) film and SrTa 2 O 6 (STA)/SiON stacked buffer layer have been demonstrated. It is determinded that the Al/STA/SiON/Si structure with a SiO 2 equivalent thickness of 3.7 nm has low leakage current of 10 -8 A/cm 2 . The memory window of 1.1 V is obtained for Pt/SBT/STA/SiON MFIS-FETs, whereas Pt/SBT/Pt/STA/SiON/Si MFMIS-FETs have memory windows as large as 3.0 V when the area ratio S M / S F is 3.8 or 5.9. Furthermore, it is also demonstrated that by reducing the metal-ferroelectric-metal (MFM) capacitor area, significant improvement of data retention characteristics can be achieved. The drain current on-off ratio remains at more than three orders of magnitude even after an elapse of 10 h.
No takes yet. Share an insight, caveat, or question.
Tokumitsu et al. (2000) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: