Preparation of SrBi2Ta2O9 Film at Low Temperatures and Fabrication of a Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor Using Al/SrBi2Ta2O9/CeO2/Si(100) Structures

We report on the fabrication of an n-channel metal/ferroelectric/insulator/semiconductor (MFIS)-Field Effect Transistor (FET) using Al/SrBi2Ta2O9/CeO2/Si(100) structures and its characterization, as well as on the preparation of SrBi2Ta2O9 ferroelectric films at low temperatures. SrBi2Ta2O9 ferroelectric films fabricated at about 650° C on a Pt/SiO2/Si substrate had a remanent polarization (P r) of 7.8 µ C/cm2. The drain current-gate voltage (I D-V G) characteristics of MFIS-FET using the Al/SrBi2Ta2O9/CeO2/Si(100) structure showed threshold hysteresis due to the ferroelectric properties of the SrBi2Ta2O9 film. Nonvolatile memory operations of the MFIS-FET were demonstrated by observing its drain current (I D) which was controlled by previously applied write voltages.