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January 1, 1985Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Submicron pattern fabrication by focused ion beams

T. Kato Hiroaki Morimoto Kazunori Saitoh H. Nakata

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Abstract

A focused ion beam (FIB) technology has many advantages for submicron structure fabrication and other maskless processes. In order to develop 4–16 M(D) RAM, the FIB technology is strongly desired for its capability of submicron lithography without proximity effects.

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Cite This Study

Kato et al. (1985) studied this question.

synapsesocial.com/papers/6a75ecd0db3f4160f98b71fd https://doi.org/10.1116/1.583289

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