β -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

As an ultra-wide bandgap semiconductor, β-Ga2O3has attracted great attention for high-power, high-voltage, and optoelectronic applications. However, until now, high-frequency performance of gallium oxide devices has been limited to relatively low current gain cutoff frequencies below 5 GHz. Here, we show that highly localized delta-doping designs can enable high-sheet-charge density to enable devices with short gate lengths that allow high-frequency operation. Field-effect transistors with a gate length of 120 nm on such delta-doped β-Ga2O3are reported here with extrinsic unity current gain frequency of 27 GHz. The device has a peak drain current of 260 mA/mm, transconductance (gm) of 44 mS/mm, and three-terminal off-state breakdown voltage of 150 V. These results demonstrate that the potential of β-Ga2O3for future RF and millimeter-wave device applications.