Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge2Sb2Te5(GST) nonvolatile memory cell. It is shown that the main source of heat for a SET to RESET transition is the GST bulk and interface regions instead of the contacting electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. Increasing bottom contact resistivity offers a scaling path for RESET current with no electrical penalties
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Karpov et al. (2006) studied this question.
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