The enhancement of Schottky barrier heights on InP substrate using a thin layer of phosphorus-nitride(P3N5), grown by a direct photochemical vapor deposition process with a gaseous mixture of PCl3 and NH3, has been studied. A Au-Schottky diode formed using the in situ processes has a 50-Å P3N5 intermediate layer showed a barrier height of 0.81 eV, an ideality factor of 1.08, and a reverse leakage current of 5.0 × 10−8 Å/cm2 at 1 V. The breakdown voltage was larger than 30 V. The thin-film/InP interface was investigated using x-ray photoelectron spectroscopy.
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Jeong et al. (1991) studied this question.
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