A low-temperature (25-300°C) growth of silicon dioxide films has been prepared from monosilane (SiH 4 ) and nitrous oxide (N 2 O) gases by mercury-sensitized photo chemical-vapor deposition (photo-CVD) using a 253.7 nm ultraviolet light lamp. The PHOTOX silcon dioxide (i.e., SiO 2 formed by the photo-CVD process) deposited at 250°C has a refractive index of about 1.46 and a breakdown strength of 7.0 × 10 6 V/cm. Capacitance-voltage measurement of the InP MOS structure yielded a minimum interface state density as low as 1.2 × 10 11 cm -2 eV -1 when the films were prepared at a substrate temperature of 250°C.
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Su et al. (1989) studied this question.
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