Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers

A multiply repeated process of thinning of silicon layer and annealing of the bonded silicon-quartz interface is proposed for tight bonding between a silicon wafer and a quartz wafer which have different thermal expansion coefficients. Silicon layers on quartz with a thickness of 2 µm±0.5 µm were debonded by a high temperature annealing over 650 C, whereas in the case of thinner silicon layers with a thickness under 0.5 µm tensile strengths over 80 MPa (800 kgf/cm 2 ) were obtained in the temperature range from 700 C to 1100 C.