Light-induced motion of misfit dislocations in Ga1−xAlxAs1−yPy- GaAs heterojunctions

This is the authors' abstract. We don't add key points for this paper.

Misfit dislocations aligned along the 〈11̄0〉 direction in Ga1−xAlxAs1−yPy-GaAs heterojunctions are shown to be moved by light irradiation. The motion of the misfit dislocation was observed with photoluminescence topographs and x-ray topographs. The velocity of the misfit dislocation is very rapid and proportional to the excitation-light intensity; it is about 2.5 μm/sec per excitation-light intensity of 100 W/cm2 at 25 °C. Its activation energy for the misfit dislocation motion is estimated to be about 0.26 eV. The rapid velocity and the low activation energy suggest that the misfit dislocations in Ga1−xAlxAs1−yPy-GaAs heterojunctions may move in the glide motion of the kink segments in it.