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An electrical and optical study has been made of the transient response of amphoteric Si-doped GaAs diodes. The luminescent turn-on and turn-off times were found to increase both with decreasing photon energy and with decreasing current drive. These results are consistent with a theory based on the wavy band model in which the recombination is from deep localized donor states and deep localized acceptor states.
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N. E. Byer (1970) studied this question.
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