A nonlinear luminescence technique is used to measure hole sweepout in a GaAs photoconductor at room temperature. The measured sweepout time for an applied field of 20 kV/cm corresponds to an average hole velocity of 2.0×106 cm/s. A simple model for extracting the photoexcited population decay from the experimental data is described.
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Lehmen et al. (1984) studied this question.
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