Point Contact Transistor Studies using Radioactive Collectors

H E number of atoms transferred to a germanium base, whilst forming an antimony collector to produce enhanced current gain U in a point-contact T transistor, has been measured in eleven cases.Pure Sb was used since it is a suitable material for forming (Haneman 1954).Also, the parameters associated with its diffusion in Ge have been previously studied.By combining K PROC PHYS, SOC.