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The principle of enhanced emission intensity in a single-mirror light emitting diode (LED) is demonstrated by placing an InGaAs multiquantum-well active region in the antinode of the optical mode created by a nearby metallic mirror, thus enhancing emission along the optical axis by up to four times. Multiple-well LED structures exhibit enhanced efficiencies similar to that of a perfect isotropic emitter. The emission intensity of single-well LEDs is limited by band filling.
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Hunt et al. (1992) studied this question.
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