Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
May 15, 2003Japanese Journal of Applied PhysicsOpen Access

RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

View Full Paper
Ask AI
Bookmark
Share

Authors

YNYasushi NanishiRitsumeikan UniversityYSYoshiki SaitoToyoda Gosei (Japan)TYTomohiro YamaguchiTwitter (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Nanishi et al. (2003) studied this question.

synapsesocial.com/papers/6a76cbf2e4645e92c9bd4b3dhttps://doi.org/10.1143/jjap.42.2549
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth Temperature Dependence of Indium Nitride Crystalline Quality Grown by RF-MBE2002 · 110 citations
  2. 2Growth of High-Electron-Mobility InN by RF Molecular Beam Epitaxy2001 · 96 citations
  3. 3Effective electron mass and phonon modes in<i>n</i>-type hexagonal InN2002 · 172 citations
  4. 4Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method2002 · 31 citations