Silicon can be directly nitrided at relatively low temperature under NH 3 flow with UV-irradiation from a low-pressure mercury lamp. The typical thickness of film is 6.2 nm for nitridation of 1 h at 800°C. The thickness is saturated with an increase in nitridation time. The Auger electron intensity of nitrogen is about two times larger than that of oxygen at the surface of the film. The apparent peak of IR absorption by the Si-N bond is seen at a wave number of 835 cm -1 .
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Ishikawa et al. (1992) studied this question.
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