Silicon can be thermally oxidized at low temperatures under dry O2 or N2O flow with UV-irradiation. The oxide thickness is about 9.0 nm in 4 h at 500°C on dry O2+UV oxidation. The oxide formed by dry O2+UV is thicker than that formed by N2O+UV at a relatively long oxidation time. The main oxidation species are ozone for dry O2+UV and excited-state 1D oxygen atoms for N2O+UV. The quality of oxide film formed by dry O2+UV is equal to that formed by common oxidation in dry O2 without UV.
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Ishikawa et al. (1991) studied this question.
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