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July 15, 1980Physical review. B, Condensed matter

Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence

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Authors

DOD. J. OlegoPhilips (United States)
M. Cardona
M. CardonaAirbus (Italy)

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Olego et al. (1980) studied this question.

synapsesocial.com/papers/6a76e5eed8eb58afc2bd7ac5https://doi.org/10.1103/physrevb.22.886
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