Photoluminescence properties were compared between two types of multi-quantum-well (MQW) structures. One of them had a potential well layer composed of binary GaAs, and the other was composed of ternary Al x Ga 1- x As. It is shown that the ternary well MQW structure is more favorable with respect both to higher emission energy and to photoluminescence linewidth than the binary well MQW structure.
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Iwamura et al. (1985) studied this question.
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