The temperature behaviour of GaAs/GaAlAs DQW-GRINSCH high-power laser diodes is calculated by means of a numerical model. The model includes a microscopic description of gain and spontaneous radiative recombination, a phenomenological description of interface and Auger recombination, and includes a pumping-current-dependent leakage. Based on the model, the temperature dependences of the macroscopic parameters of threshold current, external differential efficiency and wavelength are calculated. The resulting numerical values for these parameters are in excellent agreement with our experiments. Spontaneous radiative recombination is shown to be the dominant loss mechanism.
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Menzel et al. (1995) studied this question.
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