New evidence for a defect mechanism which is responsible for pinning states within the band gap on the (110) surfaces of the III–V compounds is presented. Investigations of column III metals on both n- and p-type GaAs revealed a systematic difference in surface Fermi energy stabilization in the gap with p-type samples pinning 0.25 eV below n-type samples. Several current models and theories of Schottky barriers are discussed in terms of both the results given in this paper and previously reported data.
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Skeath et al. (1979) studied this question.