The current-voltage characteristic of a p -type GaInAsP/InP distributed Bragg reflector (DBR) is theoretically and experimentally investigated. It is pointed out that the light hole tunneling current is dominant in the reverse bias condition. Highly selective p -doping in InP is effective to reduce the excess bias in the DBR. Experimentally, an excess bias of 0.5 V is observed for a five-pair GaInAsP (λ g =1.45 µ m)/ InP DBR grown by chemical beam epitaxy.
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Miyamoto et al. (1994) studied this question.
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