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Residual strain in single crystalline germanium islands, recrystallized by zone melting, on SiO 2 substrates has been investigated by Raman microprobe measurements with a spatial resolution of 5 µm. It was found that strain of 3.0×10 -3 –6.0×10 -3 , corresponding to local tensile stress of 2.3 to 4.6 kbar, remained in single crystalline germanium islands after zone melting recrystallization.
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Takai et al. (1984) studied this question.
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